Design View all

Striking the Right Chord for Chiplet Integration

The growing digitalization of our society has made our lives connected and, in many aspects, easier. But the digital revolution also implies that the total amount of data processed in the world is doubling every two years or so. Electronic devices such as mobile phones, laptops, satellites, servers or self-driving...

Devices View all

Concept for 3-dimensional stacking of Flash devices. A thin film field effect transistor with a silicon nitride as charge reservoir and a tunnel oxide. A.J. Walker et al., VLSI Symposium, 2003.

The Future of Non-volatile Memory

Part 4 of the series, The Triumph of Quantum Mechanics at the Heart of Solid-State Data Storage, continues with the future of non-volatile memory. The figure above is a concept for 3D stacking of Flash devices. A thin-film field effect transistor with a silicon nitride as charge reservoir and a tunnel oxide....

The Invention of NAND Flash Memory

Part 3 of the series, The Triumph of Quantum Mechanics at the Heart of Solid-State Data Storage, continues with the invention of NAND flash memory. The above image is of the first comprehensive paper reporting the NAND Flash invention where Fowler-Nordheim tunneling is used for program and erase of the memory. [1] After...

Latest Posts