ISS 2020: How to Win in Our Data-driven World
Jan 23, 2020 · By Herb Reiter · 3D Event Coverage, 3D In Context, 3D In-Depth, Blogs
Design View all
Striking the Right Chord for Chiplet Integration
The growing digitalization of our society has made our lives connected and, in many aspects, easier. But the digital revolution also implies that the total amount of data processed in the world is doubling every two years or so. Electronic devices such as mobile phones, laptops, satellites, servers or self-driving...
An Update on the Fan-out Panel-Level Packaging Consortium
One topic that has been under hot debate in the semiconductor advanced packaging sector for the past few years is fan-out panel-level packaging (FOPLP). In theory, the concept of taking fan-out from a 300-mm reconstituted wafer to a large panel format as a way to lower costs seems simple, and...
EDPS 2017: NOT the usual Electronic DESIGN Process Symposium
When planning the 24th EDPS, the organizing committee, chaired by Shishpal Rawat, former Intel executive, took a number of bold steps EDPS was traditionally held in the spring. We moved EDPS to the fall because that’s a time when more new IC projects are being planned. After many years of...
Executive Viewpoint: Breaking The Chicken and Egg Cycle for HDAP
For several years now, Herb Reiter, eda2asic, and John Ferguson, Mentor Graphics, have been evangelizing about the necessity of assembly design kits (ADK), similar to the process design kits (PDKs) for chip designers, to help drive ecosystem capabilities for what is collectively now being called high density advanced packaging (HDAP),...
Devices View all
The Future of Non-volatile Memory
Part 4 of the series, The Triumph of Quantum Mechanics at the Heart of Solid-State Data Storage, continues with the future of non-volatile memory. The figure above is a concept for 3D stacking of Flash devices. A thin-film field effect transistor with a silicon nitride as charge reservoir and a tunnel oxide....
The Invention of NAND Flash Memory
Part 3 of the series, The Triumph of Quantum Mechanics at the Heart of Solid-State Data Storage, continues with the invention of NAND flash memory. The above image is of the first comprehensive paper reporting the NAND Flash invention where Fowler-Nordheim tunneling is used for program and erase of the memory. [1] After...
The Invention of Tunneling-Based Flash Memory
Part 2 of the series, The Triumph of Quantum Mechanics at the Heart of Solid-State Data Storage, continues with a history lesson on the invention of tunneling-based flash memory. In 1956, William Shockley, shared the Nobel Prize in physics with J. Bardeen and W.H. Brattain, all at Bell Laboratories, “for their researches on semiconductors and...
The Dual-Gate Thin Film Transistor for 3D Dynamic and Flash Memory
Data is now the world’s most valuable resource. Solid-state storage of data is driving an innovation revolution built upon 50 years of progress. Here we look at the dual-gate thin film transistor (DG-TFT), an extremely versatile solid-state data storage device that can be used in monolithic 3D as either a flash...
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