Data is now the world’s most valuable resource. Solid-state storage of data is driving an innovation revolution built upon 50 years of progress. Here we look at the dual-gate thin film transistor (DG-TFT), an extremely versatile solid-state data storage device that can be used in monolithic 3D as either a flash memory or a dynamic memory element. It has the potential to provide a path not only ... »
In Parts 1 and 2 of this series, I drew your attention to what Peter Clarke, writing in EETimes on 02 January 2015, called the “15-in-15: Analog, MEMS and sensor startups to watch in 2015.” If we were to look for heterointegration spoor amongst Peter’s 15 notable startups what would we find? The first “10-in-15” companies profiled in Parts 1 and 2, namely Cambridge CMOS Sensors; Chirp Mi... »
We’ve heard it expressed many times whenever there’s a new interconnect technology vying for adoption: manufacturers will select the best performing option at the lowest cost to do the job. However, as performance requirements reach previously un-anticipated levels, pitch requirements become tighter, and density requirements become higher, the job of the packaging engineer to provide increased... »
At the beginning of April, the Semiconductor Industry Association released the 2013 International Roadmap for Semiconductors (ITRS), which has traditionally served as a guide for “assessing and improving the future of semiconductor technology,” according to Brian Toohey, president and CEO, Semiconductor Industry Association. Sponsored by five regions of the world including Europe, Japan, Korea... »
At IMAPS DPC 2014, which took place March 11-13, 2014, in Fountain Hills, AZ, there were several presentations focused on new developments in cleans for TSVs and Cu bumps for 2.5D and 3D IC processes. Cleans has become increasingly important as bump pitches are reduced and TSVs have higher aspect ratios. It’s not just about being clean enough, but also about surface preparation for the next proc... »
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