Samsung

3D NAND Flash, El Capitan and Peacocks’ Tails – An Outlook for 2015

3D NAND Flash, El Capitan and Peacocks’ Tails – An Outlook for 2015

2014: That was a year that was! Many of you, perhaps remembering my outlook missive from last year, must be looking forward to how I would explain my piffle given the marvelous developments over the past year. Well, piffle it ain’t. Just more nuanced. I’ll explain but first, a recap of events: 2014 clearly belongs to Samsung. First, in February, they came with their ISSCC presentation with a ... »

What’s Different for 3D Stacked DRAM Equipment Shipments in 2015?

What’s Different for 3D Stacked DRAM Equipment Shipments in 2015?

Why DID you miss your 2014 3D Stacked DRAM equipment shipment forecast? And what’s different about the outlook for 3D Stacked DRAM equipment shipments in 2015? Briefly, as presented in Part 1 of this thread, significant structural problems existed in the DRAM industry, present from the very beginning of 2012, that impeded the roll-out and adoption of 3D Stacked DRAM as a commercial product. Thr... »

Why You Missed Your 2014 3D Stacked DRAM Equipment Shipment Forecast

Why You Missed Your 2014 3D Stacked DRAM Equipment Shipment Forecast

Remember SEMICON West 2012? How could you forget? It was all clubbing with your customers at The Redwood Room, DNA Lounge, and The Endup after a few standout meals with them at Mission Chinese Food, Slanted Door, Wayfare Tavern, Acquerello, and Absinthe that were preceded by a few drinks with the team at House of Shields, Rickhouse, and The Old Ship Saloon that followed a day on the show floor tha... »

Are we Getting Mixed Messages on 3D IC Production?

Are we Getting Mixed Messages on 3D IC Production?

While 3D IC production is underway for memory devices, some say demand for 3D ICs is still years away. Could both be right, or are we getting mixed messages? Today’s news from  SEMICON Taiwan, in which a DigiTimes reporter quoted Mike Liang, president of Amkor Technology Taiwan as saying that 3D IC parts won’t be in demand for another three years, threw a bit of cold water on excitement gener... »

3d NAND

News of 3D NAND Fab Construction: A sign of Progress or a PR Ruse?

While I don’t claim to be an expert in 3D NAND technologies, I do keep my eye on what’s happening in the 3D NAND market. So when two 3D NAND-related EE Times articles crossed my 3D radar in two days, I naturally checked it out. After reading both articles, I have questions. First of all, Gary Hilson, EE Times, posted a news analysis piece provocatively titled, Samsung Ramps Up 3D NAND Fab ... »

Samsung’s V-NAND Flash at the 2014 ISSCC: Ye Distant Spires…

Samsung’s V-NAND Flash at the 2014 ISSCC: Ye Distant Spires…

True to form, Samsung followed up it’s V-NAND Flash announcement of 2013 with a product chip-level presentation at the 2014 IEEE International Solid-State Circuits Conference (ISSCC) in San Francisco on February 12th. This provides the ideal opportunity to study the result of their work at the product level and compare with the predictions that I made in the Towering Spires or Costly Cany... »

3D NAND Flash – Towering Spires or Costly Canyons? – Part 4

3D NAND Flash – Towering Spires or Costly Canyons? – Part 4

If you’ve followed me thus far in the three preceding posts, well done! We started by questioning the cost assumptions. Then we set the scene to be able to explain the vanishing string current problem, and then introduced the concept of pass disturb. In this post, as promised in the previous one, I want to deal with pass disturb in more detail, which is one of the more important reliability chal... »

Part 2: 3D NAND Flash: Towering Spires or Costly Canyons?

Part 2: 3D NAND Flash: Towering Spires or Costly Canyons?

In my last blog posting I went over the cost aspects of the Samsung-Toshiba 3D NAND approaches. The conclusion is quite stark: if those vertical holes and trenches are more than a few tenths of a degree from the vertical, then the whole approach can be undercut in cost by more lithography-intensive layered approaches. At the risk of belaboring that point, see the IEEE paper published this month. N... »

3D NAND

3D NAND Flash – Towering Spires or Costly Canyons?

The transition to 3D NAND Flash seems to be imminent with projections of it being half the total NAND Flash market by 2016. That means tens of billions of dollars within 3 years. V-NAND is Samsung’s version. Their first publication describing this architecture was released in 2009 and was called “TCAT” or “Terabit Cell Array Transistor”. Toshiba too has been working o... »

3d NAND

Comparing Samsung’s 3D NAND with Traditional 3D ICs

At last week’s Memcon 2013, which took place Tuesday, August 6, 2013, at the Santa Clara Convention Center, Keynoter Bob Brennen, Senior VP at Samsung, talked about the need for New DRAM and Flash Memory architectures. Richard Goering summarized Brennan’s keynote very well in his blog post. Because Brennan’s responsibility is to manage Samsung’s System Architecture Labs, he talked ... »

Page 2 of 3123