BGM300The BGM300 was designed to enable quick and accurate measurement of Through Si Via (TSV) depths, Si wafer thickness, and Remaining Si Thickness (RST) above TSVs – all essential in a managed backside via reveal process flow. Back grinding errors due to “blind” grinding can lead to significant yield loss.

Testimonial:
During the back grinding process to reveal the TSV, it is extremely important to stop grinding a few microns above the Via and then use an etching (dry/wet) process to expose the conducting material. If the remaining Si is left too thick, the etching process will be long and reduce throughput. On the other hand, if over-grinding occurs when Cu is used for the TSVs, Cu contamination of the back side of the wafer will be the consequence. Furnished with state-of-the-art proprietary IR optics and a novel interferometer, the BGM300 has enabled customers to overcome many challenges associated with the TSV reveal process and many other critical processes needed in 3DIC manufacturing.

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