High power devices are required for infrastructure projects and as RF connectivity proliferates. End applications such as electric vehicles, wind energy and cellular base stations are driving the demand for higher voltages and higher frequencies.
SiC and GaN are the primary wide bandgap (WBG) semiconductors in use to address these challenging requirements. According to Yole the SiC and GaN power device markets will reach $2B and $550M, respectively, by 2024. Critical to the fabrication of these devices are the plasma etching steps.
This webinar will review specific etch needs and show examples of high productivity solutions. These will include hard-mask open and shallow SiC trench etching, deep SiC via formation for RF and low damage SiNx and GaN etching primarily for GaN on Si structures. End-point detection, an essential method of process control, will also be discussed.
Registration is required for this online event :
Date : Wednesday 29th April 2020
Session 1: 08:00am UK (BST) / 09:00am Europe / 15:00pm China & Taiwan / 16:00pm Korea
Repeat Session: 09:00am PDT / 12:00pm EDT / 17:00pm UK / 18:00pm Europe
N.B. The same content will be shared in both live broadcasts, listed above, to accommodate all time zones.