The 2020 IEEE International Reliability Physics Symposium to Highlight Latest Research in Reliability for Semiconductor Devices, Microelectronic Systems, and Advanced Technologies.
The premier technical conference for engineers and scientists presenting the latest research in microelectronics reliability, the International Reliability Physics Symposium, will be held in Dallas, TX from March 29 – April 2, 2020. The Symposium program has expanded beyond the traditional areas of CMOS device, circuit, and systems reliability to include emerging microelectronics reliability topics, including circuit reliability & aging, wide bandgap semiconductors, neuromorphic computing reliability, and RF/mmW/5G device reliability. The Symposium will feature a technical program of more than 100 invited and accepted papers delivered by leading reliability scientists and engineers from around the world.
Topics on agenda:
Wide bandgap semiconductors – reliability topics on SiC, GaN, & gallium oxide devices
Neuromorphic computing reliability – memory & design architectures
Circuit reliability & aging – EDA tools, compact modeling, & aging-aware designs
Reliability of RF/mmW/5G devices – CMOS, SiGe, BiCMOS, SOI, & GaAs
Five keynote speakers from Intel, Infineon, Silicon Labs, Mentor, & Rice University
Two full days of 90-minute tutorial sessions, designed to provide a comprehensive overview of reliability topics
Interactive evening workshops covering 10 different reliability focus areas
More than 70 posters will be presented during the evening reception
A supplier exhibition will be held in conjunction with the technical program
For more information please visit https://irps.org/